The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

S. Hammersley, D. Watson-Parris, P. Dawson, M. J. Godfrey, T. J. Badcock, M. J. Kappers, C. McAleese, R. A. Oliver, C. J. Humphreys
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3703062
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