Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As

G. W. Paterson, M. C. Holland, I. G. Thayne, A. R. Long
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3702468
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