Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

Salah Saadaoui, Mohamed Mongi Ben Salem, Malek Gassoumi, Hassen Maaref, Christophe Gaquière
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3702458
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