Publication not explained

This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.

If you are one of the authors, claim this publication so you can create a plain langauage summary to help more people find, understand and use it.

Featured Image

Read the Original

This page is a summary of: Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition, Applied Physics Letters, April 2012, American Institute of Physics, DOI: 10.1063/1.3701584.
You can read the full text:



Be the first to contribute to this page