GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study

O. Skibitzki, F. Hatami, Y. Yamamoto, P. Zaumseil, A. Trampert, M. A. Schubert, B. Tillack, W. T. Masselink, T. Schroeder
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3701583
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