In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor

Nobuyuki Ikarashi, Hiroshi Takeda, Koichi Yako, Masami Hane
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3700723
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