Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

  • Taiping Lu, Shuti Li, Chao Liu, Kang Zhang, Yiqin Xu, Jinhui Tong, Lejuan Wu, Hailong Wang, Xiaodong Yang, Yian Yin, Guowei Xiao, Yugang Zhou
  • Applied Physics Letters, April 2012, American Institute of Physics
  • DOI: 10.1063/1.3700722

The authors haven't yet claimed this publication.

Read Publication

http://dx.doi.org/10.1063/1.3700722

In partnership with:

Link to American Institute of Physics showcase