Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

M. A. Reshchikov, M. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, A. Waag
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3699312
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