Impact of active layer design on InGaN radiative recombination coefficient and LED performance

X. Li, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T. S. Hsu, A. Matulionis
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3699199
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