Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with fluorinated Al2O3 as gate dielectrics

Chao Chen, Xingzhao Liu, Jihua Zhang, Benlang Tian, Hongchuan Jiang, Wanli Zhang, Yanrong Li
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3699029