Very low bias stress in n-type organic single-crystal transistors

  • M. Barra, F. V. Di Girolamo, N. A. Minder, I. Gutiérrez Lezama, Z. Chen, A. Facchetti, A. F. Morpurgo, A. Cassinese
  • Applied Physics Letters, March 2012, American Institute of Physics
  • DOI: 10.1063/1.3698341

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