Very low bias stress in n-type organic single-crystal transistors

M. Barra, F. V. Di Girolamo, N. A. Minder, I. Gutiérrez Lezama, Z. Chen, A. Facchetti, A. F. Morpurgo, A. Cassinese
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3698341