InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

  • O. Laboutin, Y. Cao, W. Johnson, R. Wang, G. Li, D. Jena, H. Xing
  • Applied Physics Letters, March 2012, American Institute of Physics
  • DOI: 10.1063/1.3697415

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http://dx.doi.org/10.1063/1.3697415

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