Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

  • Applied Physics Letters, March 2012, American Institute of Physics
  • DOI: 10.1063/1.3696045

The authors haven't yet claimed this publication.

Read Publication

http://dx.doi.org/10.1063/1.3696045

In partnership with: