High Si and Ge n-type doping of GaN doping - Limits and impact on stress

  • S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, A. Krost
  • Applied Physics Letters, March 2012, American Institute of Physics
  • DOI: 10.1063/1.3695172

The authors haven't yet claimed this publication.

Read Publication

http://dx.doi.org/10.1063/1.3695172

In partnership with:

Link to American Institute of Physics showcase