Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device

Yang Yin Chen, G. Pourtois, C. Adelmann, L. Goux, B. Govoreanu, R. Degreave, M. Jurczak, J. A. Kittl, G. Groeseneken, D. J. Wouters
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3695078
The author haven't yet claimed this publicationThe author haven't yet claimed this publication