On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

Z. G. Ju, S. T. Tan, Z.-H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, H. V. Demir
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3694054