Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

R. Oliva, J. Ibáñez, R. Cuscó, R. Kudrawiec, J. Serafinczuk, O. Martínez, J. Jiménez, M. Henini, C. Boney, A. Bensaoula, L. Artús
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3693579