Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

  • C. Hodges, N. Killat, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, D. Wolverson, M. Kuball
  • Applied Physics Letters, March 2012, American Institute of Physics
  • DOI: 10.1063/1.3693427

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