Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

  • T. W. Kim, T. J. Garrod, K. Kim, J. J. Lee, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss, T. F. Kuech, Rao Tatavarti, L. J. Mawst
  • Applied Physics Letters, March 2012, American Institute of Physics
  • DOI: 10.1063/1.3693160

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http://dx.doi.org/10.1063/1.3693160

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