In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

  • SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryosho Nakane, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi
  • Applied Physics Letters, February 2012, American Institute of Physics
  • DOI: 10.1063/1.3685505

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http://dx.doi.org/10.1063/1.3685505

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