Impact of high temperature annealing on La diffusion and flatband voltage (Vfb) modulation in TiN/LaOx/HfSiON/SiON/Si gate stacks

R. Boujamaa, S. Baudot, N. Rochat, R. Pantel, E. Martinez, O. Renault, B. Detlefs, J. Zegenhagen, V. Loup, F. Martin, M. Gros-Jean, F. Bertin, C. Dubourdieu
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3684709
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