Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si1-xGex alloys channel on (110) and (111) Si substrates

Shu-Tong Chang, Jun Wei Fan, Chung-Yi Lin, Ta-Chun Cho, Ming Huang
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3684599