InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers

Adam H. Blake, Derek Caselli, Christopher Durot, Jason Mueller, Eduardo Parra, Joseph Gilgen, Allison Boley, David J. Smith, Ignatius S. T. Tsong, John C. Roberts, Edwin Piner, Kevin Linthicum, James W. Cook, Daniel D. Koleske, Mary H. Crawford, Arthur J. Fischer
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3684557