Hexagonal-based pyramid void defects in GaN and InGaN

A. B. Yankovich, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, P. M. Voyles
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3679540
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