Publisher’s Note: “Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors” [J. Appl. Phys. 93, 10046 (2003)]

R. P. Joshi, V. Sridhara, B. Jogai, P. Shah, R. D. del Rosario
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3679426
The author haven't yet claimed this publicationThe author haven't yet claimed this publication