Role of atomic terraces and steps in the electron transport properties of epitaxial graphene grown on SiC

H. Kuramochi, S. Odaka, K. Morita, S. Tanaka, H. Miyazaki, M. V. Lee, S.-L. Li, H. Hiura, K. Tsukagoshi
  • AIP Advances, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3679400
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