Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers

C. C. Huang, F. J. Xu, J. Song, Z. Y. Xu, J. M. Wang, R. Zhu, G. Chen, X. Q. Wang, Z. J. Yang, B. Shen, X. S. Chen, W. Lu
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3676266
The author haven't yet claimed this publicationThe author haven't yet claimed this publication