Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

W. H. Liu, K. L. Pey, N. Raghavan, X. Wu, M. Bosman
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3676255
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