How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?

J. F. Chen, Y. C. Lin, C. H. Chiang, Ross C. C. Chen, Y. F. Chen, Y. H. Wu, L. Chang
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.3675519