Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy

Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, J.-M. Chauveau
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3673325