Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, M. Nafría
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3671565
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