Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering

M. Junaid, D. Lundin, J. Palisaitis, C.-L. Hsiao, V. Darakchieva, J. Jensen, P. O. Å. Persson, P. Sandström, W.-J. Lai, L.-C. Chen, K.-H. Chen, U. Helmersson, L. Hultman, J. Birch
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3671560
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