The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films

G. A. Devenyi, S. Y. Woo, S. Ghanad-Tavakoli, R. A. Hughes, R. N. Kleiman, G. A. Botton, J. S. Preston
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3671022
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