On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

S. M. Thomas, M. J. Prest, T. E. Whall, D. R. Leadley, P. Toniutti, F. Conzatti, D. Esseni, L. Donetti, F. Gámiz, R. J. P. Lander, G. Vellianitis, P.-E. Hellström, M. Östling
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3669490