Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance

Shih-Cheng Huang, Kun-Ching Shen, Dong-Sing Wuu, Po-Min Tu, Hao-Chung Kuo, Chia-Cheng Tu, Ray-Hua Horng
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3669377
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