Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors

Ryo Iida, Sang-Hyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Sang-Hoon Lee, Mitsuru Takenaka, Shinichi Takagi
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3668120