Publisher’s Note: “Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies” [Appl. Phys. Lett. 99, 092109 (2011)]

  • Emre Gür, Zeng Zhang, Sriram Krishnamoorthy, S. Rajan, S. A. Ringel
  • Applied Physics Letters, November 2011, American Institute of Physics
  • DOI: 10.1063/1.3666222

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http://dx.doi.org/10.1063/1.3666222

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