X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

Takuo Sasaki, Hidetoshi Suzuki, Masamitu Takahasi, Yoshio Ohshita, Itaru Kamiya, Masafumi Yamaguchi
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3664832