Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy

M. Shafi, R. H. Mari, A. Khatab, M. Henini, A. Polimeni, M. Capizzi, M. Hopkinson
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3664823