Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories

M. Rizzi, A. Spessot, P. Fantini, D. Ielmini
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3664631
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The following have contributed to this page: Daniele Ielmini