Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

Jaesoo Ahn, Irina Geppert, Marika Gunji, Martin Holland, Iain Thayne, Moshe Eizenberg, Paul C. McIntyre
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3662966