Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

C. Mannequin, P. Gonon, C. Vallée, A. Bsiesy, H. Grampeix, V. Jousseaume
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3662913