Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

Md Delwar Hossain Chowdhury, Sang Hyun Ryu, Piero Migliorato, Jin Jang
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3662869
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