Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors

K. Y. (Donald) Cheng, H. Xu, M. E. Stuenkel, E. W. Iverson, C. C. Liao, K. W. Yang, M. Feng, K. Y. (Norman) Cheng
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3662152
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