Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

  • T. Roy, E. X. Zhang, Y. S. Puzyrev, X. Shen, D. M. Fleetwood, R. D. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, C. S. Suh, U. K. Mishra, J. S. Speck, S. T. Pantelides
  • Applied Physics Letters, November 2011, American Institute of Physics
  • DOI: 10.1063/1.3662041

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http://dx.doi.org/10.1063/1.3662041

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