Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

T. Roy, E. X. Zhang, Y. S. Puzyrev, X. Shen, D. M. Fleetwood, R. D. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, C. S. Suh, U. K. Mishra, J. S. Speck, S. T. Pantelides
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3662041
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