Mobility and Dit distributions for p-channel MOSFETs with HfO2/LaGeOx passivating layers on germanium

C. Andersson, M. J. Süess, D. J. Webb, C. Marchiori, M. Sousa, D. Caimi, H. Siegwart, J. Fompeyrine
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3660717
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