Erratum: “Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator” [AIP Advances 1, 032167 (2011)]

Ni Zhong, Hisashi Shima, Hiro Akinaga
  • AIP Advances, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3660334