Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

A. Molle, L. Lamagna, C. Grazianetti, G. Brammertz, C. Merckling, M. Caymax, S. Spiga, M. Fanciulli
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3659688