Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors

G. Chen, B.-M. Nguyen, A. M. Hoang, E. K. Huang, S. R. Darvish, M. Razeghi
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3658627