Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements

N. Ma, X. Q. Wang, S. T. Liu, L. Feng, G. Chen, F. J. Xu, N. Tang, L. W. Lu, B. Shen
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3658626